bfn 25, bfn 27 oct-27-1999 1 pnp silicon high-voltage transistors ? suitable for video output stages in tv sets and switching power supplies ? high breakdown voltage ? low collector-emitter saturation voltage ? complementary types: bfn 24, bfn 26 (npn) 1 2 3 vps05161 type marking pin configuration package bfn 25 bfn 27 fks fls 1 = b 1 = b 2 = e 2 = e 3 = c 3 = c sot-23 sot-23 maximum ratings parameter symbol bfn 25 bfn 27 unit collector-emitter voltage v ceo 250 300 v collector-base voltage v cbo 250 300 emitter-base voltage v ebo 5 5 dc collector current i c 200 ma peak collector current i cm 500 base current i b 100 peak base current i bm 200 total power dissipation , t s = 74 c p tot 360 mw junction temperature t j 150 c storage temperature t stg -65 ... 150 thermal resistance junction ambient 1) r thja 280 k/w junction - soldering point r thjs 210 k/w 1) package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 cu
bfn 25, bfn 27 oct-27-1999 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics collector-emitter breakdown voltage i c = 1 ma, i b = 0 bfn 25 bfn 27 v (br)ceo 250 300 - - - - v collector-base breakdown voltage i c = 100 a, i b = 0 bfn 25 bfn 27 v (br)cbo 250 300 - - - - emitter-base breakdown voltage i e = 100 a, i c = 0 v (br)ebo 5 - - collector cutoff current v cb = 200 v, i e = 0 v cb = 250 v, i e = 0 bfn 25 bfn 27 i cbo - - - - 100 100 na collector cutoff current v cb = 200 v, i e = 0 , t a = 150 c v cb = 250 v, i e = 0 , t a = 150 c bfn 25 bfn 27 i cbo - - - - 20 20 a emitter cutoff current v eb = 3 v, i c = 0 i ebo - - 100 na dc current gain 1) i c = 1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v bfn 25 bfn 27 h fe 25 40 40 30 - - - - - - - - - collector-emitter saturation voltage1) i c = 20 ma, i b = 2 ma bfn 25 bfn 27 v cesat - - - - 0.4 0.5 v base-emitter saturation voltage 1) i c = 20 ma, i b = 2 ma v besat - - 0.9 1) pulse test: t < 300 s; d < 2%
bfn 25, bfn 27 oct-27-1999 3 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. ac characteristics transition frequency i c = 20 ma, v ce = 10 v, f = 20 mhz f t - 100 - mhz collector-base capacitance v cb = 30 v, f = 1 mhz c cb - 2.5 - pf
bfn 25, bfn 27 oct-27-1999 4 total power dissipation p tot = f ( t a *; t s ) * package mounted on epoxy 0 0 ehp00628 bfn 25/27 150 50 100 ?c t a s t 100 200 300 mw 400 p tot t t ; as transition frequency f t = f ( i c ) v ce = 10v ehp00629 bfn 25/27 10 mhz 10 10 ma f c 10 10 t 555 0123 10 3 2 10 1 5 operating range i c = f ( v ceo ) t a = 25c, d = 0 ehp00631 bfn 25/27 10 10 v ceo 10 c 10 3 1 10 -1 5 10 10 10 0 5 v ma 5 10 2 0123 555 10 100 1 100 500 dc ms ms ms s s permissible pulse load p totmax / p totdc = f ( t p ) 10 ehp00630 bfn 25/27 -6 0 10 5 d = 5 10 1 5 10 2 3 10 10 -5 10 -4 10 -3 10 -2 10 0 s 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 t p = d t t p t tot max tot p dc p p t
bfn 25, bfn 27 oct-27-1999 5 collector current i c = f ( v be ) v ce = 10 v ehp00632 bfn 25/27 10 0 v be 1.5 c 10 3 1 10 -1 5 0.5 1.0 10 0 5 v ma 5 10 2 collector cutoff current i cbo = f ( t a ) v cb = 200v ehp00633 bfn 25/27 10 0 ? c a 150 cbo 10 4 1 10 -1 5 50 100 5 10 2 10 0 5 t na max typ 5 10 3 dc current gain h fe = f ( i c ) v ce = 10v ehp00634 bfn 25/27 10 10 ma h c 10 5 fe 10 3 1 10 0 5 10 10 10 -1 0 1 2 3 5 10 2 555
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